IndiumV3, Main, Repository, bibRecord, 001636

Quantum design strategy pushes high-power vertical-external-cavity surface-emitting lasers beyond 100 W

Identifieur interne : 001636 ( Main/Repository ); précédent : 001635; suivant : 001637

Quantum design strategy pushes high-power vertical-external-cavity surface-emitting lasers beyond 100 W

Auteurs : RBID : Pascal:12-0370323

Descripteurs français

Pascal (Inist)
- Laser semiconducteur, Laser émission surface, Laser puissance, Puissance sortie, Composé ternaire, Gallium Arséniure, Indium Arséniure, Laser cavité verticale, Méthode MOVPE, Laser puits quantique, As Ga In, VCSEL, 4260J, InGaAs, 4255P.

English descriptors

KwdEn :
- Gallium Arsenides, High-power lasers, Indium Arsenides, MOVPE method, Output power, Quantum well lasers, Semiconductor lasers, Surface emitting lasers, Ternary compounds, Vertical cavity laser.

Abstract

Combining rigorous quantum epitaxial design, highly accurate growth, novel processing and thermal management pushes the output power of single chip vertical-external-cavity surface-emitting lasers (VECSELs) beyond the 100 W milestone.

Links toward previous steps (curation, corpus...)

to stream Main, to step Corpus: 001826

Links to Exploration step

Pascal:12-0370323

Le document en format XML

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<author><name sortKey="Moloney, Jerome V" uniqKey="Moloney J">Jerome V. Moloney</name>
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<author><name sortKey="Stolz, Wolfgang" uniqKey="Stolz W">Wolfgang Stolz</name>
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</titleStmt>
<publicationStmt><idno type="inist">12-0370323</idno>
<date when="2012">2012</date>
<idno type="stanalyst">PASCAL 12-0370323 INIST</idno>
<idno type="RBID">Pascal:12-0370323</idno>
<idno type="wicri:Area/Main/Corpus">001826</idno>
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<seriesStmt><idno type="ISSN">1863-8880</idno>
<title level="j" type="abbreviated">Laser photonics rev. : (Print)</title>
<title level="j" type="main">Laser & photonics reviews : (Print)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Gallium Arsenides</term>
<term>High-power lasers</term>
<term>Indium Arsenides</term>
<term>MOVPE method</term>
<term>Output power</term>
<term>Quantum well lasers</term>
<term>Semiconductor lasers</term>
<term>Surface emitting lasers</term>
<term>Ternary compounds</term>
<term>Vertical cavity laser</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Laser semiconducteur</term>
<term>Laser émission surface</term>
<term>Laser puissance</term>
<term>Puissance sortie</term>
<term>Composé ternaire</term>
<term>Gallium Arséniure</term>
<term>Indium Arséniure</term>
<term>Laser cavité verticale</term>
<term>Méthode MOVPE</term>
<term>Laser puits quantique</term>
<term>As Ga In</term>
<term>VCSEL</term>
<term>4260J</term>
<term>InGaAs</term>
<term>4255P</term>
</keywords>
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</teiHeader>
<front><div type="abstract" xml:lang="en">Combining rigorous quantum epitaxial design, highly accurate growth, novel processing and thermal management pushes the output power of single chip vertical-external-cavity surface-emitting lasers (VECSELs) beyond the 100 W milestone.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1863-8880</s0>
</fA01>
<fA03 i2="1"><s0>Laser photonics rev. : (Print)</s0>
</fA03>
<fA05><s2>6</s2>
</fA05>
<fA06><s2>5</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Quantum design strategy pushes high-power vertical-external-cavity surface-emitting lasers beyond 100 W</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>WANG (Tsuei-Lian)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>HEINEN (Bernd)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>HADER (Jörg)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>DINEEN (Colm)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>SPARENBERG (Mino)</s1>
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<fA11 i1="06" i2="1"><s1>WEBER (Antje)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>KUNERT (Bernardette)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>KOCH (Stephan W.)</s1>
</fA11>
<fA11 i1="09" i2="1"><s1>MOLONEY (Jerome V.)</s1>
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<fA11 i1="10" i2="1"><s1>KOCH (Martin)</s1>
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<fA11 i1="11" i2="1"><s1>STOLZ (Wolfgang)</s1>
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<sZ>9 aut.</sZ>
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<sZ>11 aut.</sZ>
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<fA20><s2>L12-L14</s2>
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<fA21><s1>2012</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>27912</s2>
<s5>354000504498190120</s5>
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<fA44><s0>0000</s0>
<s1>© 2012 INIST-CNRS. All rights reserved.</s1>
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<fA45><s0>6 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>12-0370323</s0>
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<fA60><s1>P</s1>
<s3>CR</s3>
</fA60>
<fA61><s0>A</s0>
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<fA64 i1="01" i2="1"><s0>Laser & photonics reviews : (Print)</s0>
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<fA66 i1="01"><s0>DEU</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Combining rigorous quantum epitaxial design, highly accurate growth, novel processing and thermal management pushes the output power of single chip vertical-external-cavity surface-emitting lasers (VECSELs) beyond the 100 W milestone.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B40B55P</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B40B60J</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Laser semiconducteur</s0>
<s5>09</s5>
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<s5>09</s5>
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<s5>10</s5>
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<s5>10</s5>
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<s5>11</s5>
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<s5>11</s5>
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<fC03 i1="04" i2="X" l="FRE"><s0>Puissance sortie</s0>
<s5>41</s5>
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<fC03 i1="04" i2="X" l="ENG"><s0>Output power</s0>
<s5>41</s5>
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<s5>50</s5>
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<s2>NC</s2>
<s2>NA</s2>
<s5>51</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Gallium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>51</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Indium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>52</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Indium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>52</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Laser cavité verticale</s0>
<s5>61</s5>
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<s5>61</s5>
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<s5>61</s5>
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<s5>62</s5>
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<fC03 i1="09" i2="X" l="ENG"><s0>MOVPE method</s0>
<s5>62</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Método MOVPE</s0>
<s5>62</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Laser puits quantique</s0>
<s5>63</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Quantum well lasers</s0>
<s5>63</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>As Ga In</s0>
<s4>INC</s4>
<s5>75</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>VCSEL</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>4260J</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>85</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>4255P</s0>
<s4>INC</s4>
<s5>91</s5>
</fC03>
<fN21><s1>289</s1>
</fN21>
</pA>
</standard>
</inist>
</record>

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Quantum design strategy pushes high-power vertical-external-cavity surface-emitting lasers beyond 100 W

Quantum design strategy pushes high-power vertical-external-cavity surface-emitting lasers beyond 100 W

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